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UF3SC065030D8S

Qorvo
UF3SC065030D8S
SICFET N-CH 650V 18A 4DFN
4-PowerTSFN
Active
UF3SC065030D8S
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UF3SC065030D8S Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 42mOhm @ 20A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 12 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
FET Feature -
Power Dissipation (Max) 179W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 4-DFN (8x8)
Package / Case 4-PowerTSFN
7,345 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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