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P3D12010G2
PN Junction Semiconductor
P3D12010G2
DIODE SIL CARB 1.2KV 33A TO263-2
TO-263-2
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P3D12010G2 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | P3D | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 33A | |
| Voltage - Forward (Vf) (Max) @ If | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | - | |
| Package / Case | TO-263-2 | |
| Supplier Device Package | TO-263-2 | |
| Operating Temperature - Junction | -55°C ~ 175°C |
2,780
In Stock
Minimum: 1
Unit Price:
$6.54
Total Price:
$6.54
This price is for reference only, please contact us for now price support@easev.net.
