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SS150TI60110
IXYS-RF
SS150TI60110
DIODE ARR SIC SCHOT 600V DE150
6-SMD, Flat Lead Exposed Pad
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SS150TI60110 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Diode Configuration | 3 Independent | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 600 V | |
Current - Average Rectified (Io) (per Diode) | 10A | |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 600 V | |
Operating Temperature - Junction | -55°C ~ 175°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 6-SMD, Flat Lead Exposed Pad | |
Supplier Device Package | DE150 |
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