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G3S12015P
Global Power Technology-GPT
G3S12015P
DIODE SIL CARB 1.2KV 42A TO247AC
TO-247-2
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G3S12015P Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Current - Average Rectified (Io) | 42A | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 15 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 1200 V | |
Capacitance @ Vr, F | 1379pF @ 0V, 1MHz | |
Mounting Type | Through Hole | |
Package / Case | TO-247-2 | |
Supplier Device Package | TO-247AC | |
Operating Temperature - Junction | -55°C ~ 175°C |
4,788
In Stock
Minimum: 1
Unit Price:
$11.49
Total Price:
$11.49
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