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G3S06550P
Global Power Technology-GPT
G3S06550P
DIODE SIL CARB 650V 105A TO247AC
TO-247-2
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G3S06550P Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 105A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 50 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V | |
| Capacitance @ Vr, F | 4400pF @ 0V, 1MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-2 | |
| Supplier Device Package | TO-247AC | |
| Operating Temperature - Junction | -55°C ~ 175°C |
8,936
In Stock
Minimum: 1
Unit Price:
$30.48
Total Price:
$30.48
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