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G4S12010PM
Global Power Technology Co. Ltd
G4S12010PM
DIODE SIC 1.2KV 33.2A TO247AC
TO-247-2
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G4S12010PM Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Current - Average Rectified (Io) | 33.2A | |
Voltage - Forward (Vf) (Max) @ If | - | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | - | |
Capacitance @ Vr, F | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | TO-247-2 | |
Supplier Device Package | TO-247AC | |
Operating Temperature - Junction | -55°C ~ 175°C |
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