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G3S06508J
Global Power Technology Co. Ltd
G3S06508J
DIODE SIL CARB 650V 23A TO220ISO
TO-220-2 Isolated Tab
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G3S06508J Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 23A | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V | |
Capacitance @ Vr, F | 550pF @ 0V, 1MHz | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 Isolated Tab | |
Supplier Device Package | TO-220ISO | |
Operating Temperature - Junction | -55°C ~ 175°C |
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